硅外延片生产中工艺缺陷——滑移线的成因分析和控制措施

天津科技 ›› 2023, Vol. 50 ›› Issue (12): 35-37.

硅外延片生产中工艺缺陷——滑移线的成因分析和控制措施

徐卫东, 肖健, 何晶

南京国盛电子有限公司江苏南京 211111

收稿日期:2023-12-04 出版日期:2023-12-25 发布日期:2023-12-26

Cause Analysis and Control Measures of Process Defect Slip Lines in Silicon Epitaxial Wafer Production

XU Weidong, XIAO Jian, HE Jing

Nanjing Guosheng Electronics Co.,Ltd.,Nanjing 211111,Jiangsu Province,China

Received:2023-12-04 Online:2023-12-25 Published:2023-12-26

摘要/Abstract

摘要： 滑移线是一种硅外延片生产中常见的缺陷,由于硅外延片在加热处理过程中受到不均匀的温度分布影响,导致其表面出现的一种工艺缺陷现象。结合生产设备ASM2000型号外延炉,阐述了滑移线的形成机理,通过研究衬底、基座、升降温速率、温场均匀性等对滑移线的影响,提出了针对关键影响因素的解决办法,以避免滑移线的产生、改善硅外延片的生产质量和提高硅外延片的性能。

关键词: 硅外延缺陷, 滑移线, PID控制

Abstract: Slip line is a common defect in silicon epitaxial wafer production,which is mainly due to the uneven temperature distribution of silicon epitaxial wafers during the heating process,resulting in a process defect on the surface of silicon epitaxial wafers. This paper discusses the formation mechanism of the slip line for the ASM2000 epitaxial furnace,and studies the influence of substrate,base,temperature rise and fall rate,temperature field uniformity,etc. on slip line. The solutions of key influencing factors are proposed to avoid the generation of slip lines,improve the production quality of silicon epitaxial wafers and enhance the performance of silicon epitaxial wafers.

Key words: silicon epitaxial defects, slip line, PID control

中图分类号:

O77+1

徐卫东, 肖健, 何晶. 硅外延片生产中工艺缺陷——滑移线的成因分析和控制措施[J]. 天津科技, 2023, 50(12): 35-37.

XU Weidong, XIAO Jian, HE Jing. Cause Analysis and Control Measures of Process Defect Slip Lines in Silicon Epitaxial Wafer Production[J]. TIANJIN SCIENCE & TECHNOLOGY, 2023, 50(12): 35-37.