TIANJIN SCIENCE & TECHNOLOGY ›› 2023, Vol. 50 ›› Issue (12): 35-37.

• Basic Research • Previous Articles     Next Articles

Cause Analysis and Control Measures of Process Defect Slip Lines in Silicon Epitaxial Wafer Production

XU Weidong, XIAO Jian, HE Jing   

  1. Nanjing Guosheng Electronics Co.,Ltd.,Nanjing 211111,Jiangsu Province,China
  • Received:2023-12-04 Online:2023-12-25 Published:2023-12-26

Abstract: Slip line is a common defect in silicon epitaxial wafer production,which is mainly due to the uneven temperature distribution of silicon epitaxial wafers during the heating process,resulting in a process defect on the surface of silicon epitaxial wafers. This paper discusses the formation mechanism of the slip line for the ASM2000 epitaxial furnace,and studies the influence of substrate,base,temperature rise and fall rate,temperature field uniformity,etc. on slip line. The solutions of key influencing factors are proposed to avoid the generation of slip lines,improve the production quality of silicon epitaxial wafers and enhance the performance of silicon epitaxial wafers.

Key words: silicon epitaxial defects, slip line, PID control

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